EXPLORATORY DEVELOPMENT OF THE Q-FACTOR TECHNIQUE.
Abstract
The Q-factor technique is a method of describing bipolar transistor gain as a function of the radiation exposure of the device. The ultimate goal of the Q-factor approach is to provide an accurate means of predicting transistor gain as a function of radiation type for various temperature, operating, and measurement conditions. To achieve this objective, this program is planned as an experimental-analytical effort to screen and identify the qualitative influences of the intermixed variables. The experimental phase will consist of a series of gamma and two nuclear reactor tests with X-irradiation used to assist in separating surface and bulk damage effects. Results are presented of two gamma radiation tests performed to study gain degradation of the 2N1613 and 2N2378 silicon transistors under various operating and measurement conditions. The damage is analyzed using the Q-factor technique of series testing and linear damage variations with flux. Base transit time measurements are used to correlate differences in gain damage rates with differences in base geometry and doping between transistors of the same type. The damage constants derived from the radiation tests were found to be dependent upon the particular set of irradiation and measurement conditions employed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 10, 1964
- Accession Number
- AD0608959
Entities
People
- Max Frank