STUDY OF SURFACE STATES IN SEMICONDUCTORS.
Abstract
Using the pulsed field effect, surface state studies were conducted on silicon surfaces oxidized by two methods, thermal oxidation in steam and anodic oxidation. The n-type samples which were thermally oxidized showed an activation energy of 0.51 eV, capture cross section of 3 x 10 to the 16th power, and density of 10 to the 10th power 1 sq cm. The anodically oxidized samples showed no evidence of surface states. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1964
- Accession Number
- AD0608989
Entities
People
- G. Rupprecht
- J. Gilbert
- P. H. Smakula