DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.

Abstract

Additional experimental work has been done to study the surface effects on bipolar and unipolar devices, some with metal - oxide - silicon structures. The results are related to the models presented in previous reports. An additional mechanism is proposed for changes which occur in metal - oxide - silicon structures in which a field is present perpendicular to the surface. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1964
Accession Number
AD0609065

Entities

People

  • Ki Dong Kang

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Chemical Compounds
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Metal Oxides
  • Ores
  • Oxides
  • Oxygen Compounds
  • Transistors

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