ELECTRON BOMBARDMENT OF SILICON SOLAR CELLS,
Abstract
Silicon solar cells were irradiated with 500 kev electrons to determine the effect of electron radiation similar to that encountered in satellites on the efficiency of solar cells. The experiments show that an integrated flux of about 5 x 10 to the 13th power e/sq cm reduces silicon solar cell efficiency by about 25 percent. Additional experiments using quartz and glass shielding for radiation protection show the suitability of reducing the radiation damage by this technique. Combining the experimental results with the simple theory, 0.065 in. of quartz or glass are indicated as necessary to provide protection from 800 kev electrons in the trapped radiation bands. Additional protection of shielded silicon solar cells will result from annealing of radiation induced defects at a low rate near room temperatures. No quantitative data on annealing was obtained from these experiments, but this effect should be regarded as a subject for further investigation in addition to detailed investigation of radiation damage in silicon solar cells. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 24, 1960
- Accession Number
- AD0609424
Entities
People
- R. G. Downing
Organizations
- TRW Inc.