COMPATIBLE ACTIVE THIN-FILM INTEGRATED STRUCTURES.
Abstract
A method was developed for depositing silicon films by the pyrolytic decomposition of SiH4 on single-crystal sapphire. Electron diffraction and Laue reflection examination of the films show single-crystal patterns. A Hall mobility of 135 sq. cm/volt-sec at a hole density of 10 to the 17th power/cu. cm was measured. Insulated-gate field-effect transistors with a transconductance of 1000 micro mho at 5 ma were made with dimensions of 10 micron source-to-drain spacing and an active distance of 120 microns. This value compares favorably with similar units made on bulk silicon and is very encouraging for the possibilities of thin-film silicon devices. A technique of evaporation was developed in which the source is a large silicon ingot heated by electron beam bombardment. P-type silicon films on sapphire were produced that gave a mobility of 145 sq. cm/volt-sec at a concentration of 9 x 10 to the 16th power/cu. cm. Electron diffraction patterns showed that portions of the film are single crystal. Successful devices could not be made on this material. Transistors were formed on small rectangles of silicon so that bonding connections can be made to metal over a sapphire substrate rather than over a thin oxide that may be readily damaged. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1964
- Accession Number
- AD0609461
Entities
People
- A. G. Revesz
- C. W. Mueller
- D. Meyerhoffer
- E. P. Helpert
- P. H. Robinson
Organizations
- RCA Corporation