SEMICONDUCTOR LASER AMPLIFIER TECHNIQUES (SEMLAM).
Abstract
Information is reported on the work done in the Semiconductor LASER Amplifier Program. A transmission type light amplifier was successfully tested. The system used consists of a light-emitting GaAs diode, with SiO antireflection coated Fabry-Perot surfaces, as an amplifier and a CW oxygen gas LASER as an oscillator. Gain of 15 db from the gas LASER beam was observed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1964
- Accession Number
- AD0609704
Entities
Organizations
- General Electric