RADIATION EFFECTS ON FIELD-EFFECT TRANSISTORS, PART I.

Abstract

Several varieties of junction gate field-effect transistors were studied to determine transient drain currents upon exposure to single pulses of bremsstrahlung from the White Sands linear accelerator. Data obtained indicate that the transient currents are dependent on a) the junction volume and b) the transconductance. At low gate voltages, where the transconductance is close to its maximum value, the transient I sub D is small compared to the operating I sub D. However, at gate voltages near 'pinch-off', the transient I sub D is much larger than the operating I sub D and may present problems in switching applications. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1964
Accession Number
AD0609932

Entities

People

  • Edwin T. Hunter

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bremsstrahlung
  • Field Effect Transistors
  • Linear Accelerators
  • Radiation
  • Radiation Effects
  • Switching
  • Transconductance
  • Transistors

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology