DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.

Abstract

A complete summary on common emitter DC gain degradation phenomena on NPN transistors is given. The h sub Fe degradation, with respect to nonbias temperature stress, reverse bias plus temperature stress, operating life stress, encapsulating ambient, surface contamination, surface coating, etc., is discussed. Also models for h sub FE degradation are presented. In the second part the reasons why the surface sensitive parameters are not closely correlated are discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1964
Accession Number
AD0609994

Entities

People

  • Ki Dong Kang

Organizations

  • Motorola Mobility

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Contamination
  • Degradation
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Npn Transistors
  • Transistors

Fields of Study

  • Engineering

Readers

  • Semiconductor Device Technology
  • Structural Health Monitoring of Composite Structures.