INVESTIGATION OF HOT ELECTRON EMITTER.

Abstract

The attenuation length of hot electrons in platinum was studied by the photoelectric method using Pt-Si Schottky barriers. The hot electron attenuation length in these films is equal to or less than 120A. The resistivity of these Pt films is in the range of 20 to 30 microhm-cm, indicating that the films may contain a sufficient density of structural defects to influence the hot electron attenuation length. Rhodium-silicon Schottky barriers were made which exhibit a barrier height of 0.78 volts. The barriers show no degradation during vacuum heating at temperatures as high as 600C. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 15, 1964
Accession Number
AD0610195

Entities

People

  • Richard W. Soshea

Tags

DTIC Thesaurus Topics

  • Attenuation
  • Charged Particles
  • Degradation
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Elements
  • Fermions
  • Group 10 Elements
  • Leptons
  • Losses
  • Platinum

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene