ANALYTICAL STUDY OF ZINC-DIFFUSION IN GALLIUM ARSENIDE AND THE ELECTRICAL PROPERTIES OF THE RESULTING DIFFUSED LAYERS,

Abstract

This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1964
Accession Number
AD0610262

Entities

People

  • Rajendra Mehta

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Diffusion
  • Electrical Properties
  • Elements
  • Equations
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Measurement
  • Metals
  • Post-Transition Metals

Fields of Study

  • Materials science

Readers

  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics