RESEARCH ON MICROWAVE INTERACTIONS IN SEMICONDUCTORS.
Abstract
This study has two tasks. The first has as its objective to produce and evaluate distributed semiconductor structures. The second task consists of a study of solid state ultrasonic amplifiers and of evaluation of design methods and principles for such devices. The goals of the first task were the fabrication and evaluation of a long, narrow silicon PN junction diode and the analysis of a microwave device using such a diode as the active element. Analysis demonstrated that the impedance of these devices was too low for efficient performance. The devices were fabricated in a novel manner by oxide masking and diffusion techniques which are described. The achieved device parameters were 60 pfd/linear inch capacitance and a cut-off frequency of about 2 kMc/s. Although the latter figure could be improved drastically by reducing series resistance, it is not believed that the capacitance could be reduced enough to make the device efficient at microwave frequencies. A 20 mil wide segment of one of the long diodes was packaged in a microwave cartridge. The capacitance was about 5 pf at 1 mc/s.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1964
- Accession Number
- AD0610604
Entities
People
- J. P. Dietz
- R. W. Aldrich
- S. Wanuga
Organizations
- General Electric