WIDE BAND GAP SEMICONDUCTORS.
Abstract
The over-all objective of this program was to supply Lincoln Laboratory with crystals of one or more of the compounds of the class consisting of cubic BP, BAs, AlP and A1As suitable for fabrication into electroluminescent diodes. The goal of the materials preparation work was to develop means of making crystals of maximum purity, size and structural quality, and to prepare crystals containing various dopants. In a corollary program, electrical and optical measurements on the materials were made in order to determine their fundamental properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1964
- Accession Number
- AD0610629
Entities
People
- D. E. Hill
- R. I. Stearns
Organizations
- Massachusetts Institute of Technology