PRELIMINARY EVALUATION OF EXPERIMENTAL UHF SEMICONDUCTOR DIODE,
Abstract
A new high-voltage UHF detector semiconductor diode has been developed, based on an extension of 'hot carrier' techniques. Preliminary evaluation of the diode (hpa 2018) showed that excellent detector performance at 500 MHz as well as 'turnon' and 'turnoff' characteristics are achieved with this diode. Other measurements indicate that good detector performance extends into the lower GHz range. The diode, which is rated at a minimum peak inverse voltage of 100 V and a junction dissipation of 100 mw is presently available from hpa in sample quantities. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1964
- Accession Number
- AD0610630
Entities
People
- Einar Naess
Organizations
- Harry Diamond Laboratories