CATALYTIC PROPERTIES OF SEMICONDUCTORS.
Abstract
A study of the catalytic activity of semiconductor surfaces is reported. The ortho-parahydrogen conversion and hydrogen-deuterium exchange were investigated on the following materials: sodium tungsten bronzes, (Na)x WO3 0.30<x<0.98, graphite-like ytterbium disilicide, YbSi2, germanium, from p-type, resistivity 0.01 ohm cm to n-type 0.005 ohm cm and gallium arsenide from p-type, 0.003 ohm cm to n-type, ca. 0.001 ohm cm. The first two materials were in the form of crystalline powders while the germanium and gallium arsenide were obtained in the form of single-crystal wafers and the catalytic surface was generated by crushing under 'clean' conditions (high vacuum). In this case catalytic activity was measured during the period of crushing at room temperature, and thereafter at temperatures 373-550K and hydrogen pressures 6-100 mm Hg. For germanium the activity was also measured at temperatures up to 700K. Some measurements were also made under ultra-high vacuum conditions. The activity of the sodium tungsten bronzes was measured from 77 to 470K (pressure 10-400 mm Hg) ytterbium disilicide was measured in the temperature range 50-400K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0610780
Entities
People
- E. Banks
- E. M. Loebl
- F. C. Collins
- I. Sarfati
Organizations
- New York University Tandon School of Engineering