CRITICAL POINTS OF THE FREQUENCY SURFACES IN THE SILICON CRYSTAL,
Abstract
The one-phonon and two-phonon infra-red absorption spectrum (10-130 microns) in silicon crystals reveals a structure due to Van HOVE's critical points for frequency surfaces. From the experimental data it is possible to obtain the precise values of phonon energies for the various branches of the frequency spectrum at the following points in the reduced zone: Gamma (0, 0, 0), X(1, 0, 0), L(1/2, 1/2, 1/2), W(1, 1/2, 0) and Sigma (3/4, 3/4, 0). These results agree with a set of critical points for the symmetry properties established on the basis of theoretical, topological and group considerations. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 15, 1963
- Accession Number
- AD0611144
Entities
People
- E. Da Silva
- M. Balkanski
- W. Nazerewicz
Organizations
- École Normale Supérieure