SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON,

Abstract

Theoretical considerations on the photon phonon interaction and experimental results concerning fast neutron irradiated silicon have been presented. The infrared absorption spectrum contains absorption bands at 488, 417, 332, and presumably at 140/cm attributed to a single phonon absorption process connected with the excitation of the fundamental modes, TO, LO, LA, and TA, respectively. These fundamental modes become active because of the lattice polarization bombardment. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1963
Accession Number
AD0611145

Entities

People

  • M. Balkanski
  • Witold Nazarewicz

Organizations

  • École Normale Supérieure

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Excitation
  • Fast Neutrons
  • Neutrons
  • Phonons
  • Photoexcitation
  • Polarization
  • Sorption
  • Spectra
  • Subatomic Particles

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.