STUDY OF THE OPTICAL PROPERTIES OF HIGHLY DOPED AND DEGENERATE SILICON,

Abstract

An investigation was made of the free carrier absorption, the absorption peak at 2.3 microns, and the energy shift of the fundamental absorption edge. The 2.3 microns peak was attributed to intraband transition. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 15, 1963
Accession Number
AD0611146

Entities

People

  • M. Balkanski

Organizations

  • École Normale Supérieure

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Optical Properties
  • Transitions

Fields of Study

  • Engineering
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.