PRESSURE DEPENDENCE OF THE ELECTRICAL AND OPTICAL PROPERTIES OF SEMICONDUCTORS.

Abstract

Topics include: optical and electrical properties of lead salts under pressure; electrical properties of gray tin as a function of pressure and band structure studies of HgSe and HgTe; effect of pressure on the properties of intermetallic crystals; spin resonance measurements on semiconductors; investigation of the properties of the transition metal oxides; construction and application of a new ratio type spectrometer for the measurement of small increments in absorption coefficients; investigation of the semiconducting properties of forsterite; investigation of the Faraday rotation in semiconductors; investigation of the optical properties of Ge, PbS, CdTe, and HgTe thin films; the effect of pressure on the spontaneous and stimulated radiative recombination spectrum of intermetallic compounds.

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1964
Accession Number
AD0611147

Entities

Organizations

  • Harvard University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Structures
  • Coefficients
  • Electrical Properties
  • Energy Bands
  • Intermetallic Compounds
  • Measurement
  • Metal Oxides
  • Optical Properties
  • Resonance
  • Semiconductors
  • Spin Resonance
  • Thin Films
  • Transition Metals

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene