INVESTIGATION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF JUNCTIONS IN VAPOR-DEPOSITED COMPOUND SEMICONDUCTORS.
Abstract
Germanium was epitaxially deposited on gallium arsenide by means of the hydrogen reduction of GeC14. Above 800C, germanium reacted with the GaAs seed to form a black powder. Proper deposition was observed below about 750C. Nonetheless, cross doping of the Ge layer by gallium was observed even at deposition temperatures as low as 670C; the heterojunctions showed tunnel diode characteristics. Deliberately doped junctions of p-Ge on n-GaAs showed the I-V characteristics of Ge junctions, while the photovoltaic response was that of a GaAs junction. Epitaxial lasers were made by the deposition of zinc-doped epitaxial layers on n-type GaAs substrates. It was necessary to codeposit tin along with the zinc. The threshold current density was about 13,000 amps/ sq. cm. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1964
- Accession Number
- AD0611431
Entities
People
- Henry T. Minden
Organizations
- Sperry Corporation