CERTAIN OPTICAL AND ELECTRICAL PROPERTIES OF THIN INDIUM ANTIMONIDE LAYERS,

Abstract

This report describes a method of obtaining indium antimonide layers of n-type with a mobility of electrons of up to 8500 sq cm/v.sec. Given are results of measuring the temperature dependence of electroconductivity, Hall constant and magneto resistances in the temperature range of from 140-550K, and also light permeability in the range of wave lengths of 0.7 - 8.1 microns. It is shown, that the obtained layers can be used for the manufacture of Halls EMF sensing elements. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 29, 1965
Accession Number
AD0611523

Entities

People

  • M. V. Kot
  • V. A. Kasyan

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Antimony Compounds
  • Chemical Compounds
  • Electrical Properties
  • Electrons
  • Elements
  • Group 13 Elements
  • Indium
  • Indium Antimonides
  • Inorganic Chemicals
  • Metals
  • Mobility
  • Permeability
  • Resistance

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene