SEMICONDUCTOR DEVICE CONCEPTS.
Abstract
Mixed crystals of ZnSe and ZnTe have been synthesized by the vapor phase growth method. The ZnSexTe(1-x) crystals can be made in both n- and p-type conductivity form in the approximate composition range of 0.4 < or = x < or = 0.6. The crystals are p-type as grown and can be converted to n-type form by doping with Al. Low resistivity n-type crystals exhibit a donor ionization energy of approximately 0.01 ev. Low resistivity p-type crystals have shown ionization energies between 0.035 and 0.044 ev. P-n junctions fabricated from the grown crystals have shown red electroluminescence with a visibility threshold of about 1.4 volts at room temperature. FM junction laser structures have been assembled and tested. Attempts to produce significant amounts of frequency modulation have thus far been unsuccessful due to excessive photocurrents in the modulating section. Studies on the halogen transport synthesis of GaAs and GaAs(x)P(1-x) have continued. A number of GaAs ingots doped with tellurium have been made. No correlation between electrical parameters and threshold currents was found. However, material with high threshold currents appears to have a large number of etch pits and cracks. This is also true for the GaAs(x)P(1-x) alloys. It thus appears that strains and imperfections in the crystals affect their laser behavior. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1964
- Accession Number
- AD0611630
Entities
People
- Frederick K. Heumann
- Hugh H. Woodbury
- Manuel Aven
- Richard Baertsch
- Robert N. Hall
Organizations
- General Electric