HIGH FREQUENCY TUNNEL DEVICE STUDY.
Abstract
The most immediate problem limiting the practical application of tunnel devices for low noise receiver applications has been the short lifetimes heretofore obtained. Low temperature operation is desirable to achieve low noise, and from our recent results it also seems to be highly beneficial from the standpoint of life. The lifetimes of Al:Al2O3:Au tunneling structures are extended by factors ranging from 10 to 100 when operation is carried out at 200K as compared with operation at room temperature. The large increase in sandwich current and emission into vacuum in the early stages of life of devices tested at constant voltage appears to be due to change in the barrier probably because of ion migration. The capacitance increases at a similar rate. Both effects are slowed by operation at reduced temperatures. The large increase in sandwich current observed near the end of life may be due to a runaway condition related to an apparent negative resistance which develops at voltages somewhat below the normal operating point. The change in the slope of the V-J characteristics near the end of life may be due to the development of conducting channels extending partially through the insulating film. Both of these effects are marked at low temperatures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1965
- Accession Number
- AD0612059
Entities
People
- A. Starr
- S. R. Steele
Organizations
- RTX