SOME ASPECTS OF SOLUTE SEGREGATION TO STACKING FAULTS,
Abstract
Although the possibility of segregation of substitutional atoms to stacking faults has been discussed by a number of authors, experimental confirmation is quite contradictory. To clarify this point, a series of isothermal annealing measurements of a substitutional FCC alloy was performed to investigate the existence and kinetics of segregation. During the first hour of room temperature annealing of filings of a Cu plus 22.8 atomic % Zn alloy, the width of stacking faults increases. This increase is produced by segregation to the faults. Subsequently, after annealing for about one day, a decrease in the width of the faults occurs. The origin of this decrease in width remains unknown. By correlation of the amount of faulting present and the electrical resistivity, the following observations about the resistivity of stacking faults in this system can be made: (A) Prior to the drop in the width of the faults, the fault contributes about twenty per cent of the resistivity per unit length of dislocation ribbon. (B) The specific resistivity of the fault is 1.1 x 10 to the minus 12th power eta ohm-sq cm, where eta is the number of faults per unit distance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1965
- Accession Number
- AD0612087
Entities
People
- M. L. Rudee
- R. A. Huggins
Organizations
- Stanford University