RADIATION DAMAGE IN SEMICONDUCTORS.

Abstract

This report describes studies in the following areas: (1) Defect mobility in irradiated semiconductors: 3 stages of annealing are observed in Silicon between OC and 120C, with different defect mobilities. (2) Radiation enhanced diffusion in silicon: new experimental rsults lead to a model of defect diffusion with trapping at impurities (3) Low temperature irradiation of semiconductors: thermal, optical and electrical measurements are being prepared. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 10, 1964
Accession Number
AD0612090

Entities

People

  • P. Baruch

Organizations

  • École Normale Supérieure

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Compound Semiconductors
  • Diffusion
  • Electrical Measurement
  • Electronics
  • Impurities
  • Low Temperature
  • Measurement
  • Mobility
  • Radiation
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics