INTRA-AND INTERVALLEY SCATTERING AND THE TAILING OF THE CONDUCTION BAND IN IMPURE NTYPE GERMANIUM,

Abstract

The piezoresistance of degenerate n-type germanium doped with arsenic has been measured at 1.3K using uniaxial compression along (110) and (111). The largest stress was 5 X 10 to the 9th power dyn/sq cm. The results are compared with a simple degenerate model which includes intra- and intervalley scattering but which neglects the possibility of tail states. An appreciable contribution of intervalley scattering was found. The mobility due to intravalley scattering appears to be independent of impurity concentration between 8 X 10 to the 17th power and 5 X 10 to the 18th power/cu cm. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1962
Accession Number
AD0612234

Entities

People

  • H. Fritzsche
  • M. Cuevas

Organizations

  • University of Chicago

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Compression
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Germanium
  • Impurities
  • Mobility
  • Scattering
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.