SPONTANEOUS BENDING OF THIN (111) CRYSTALS OF III-V COMPOUNDS,

Abstract

Thin (111) wafers of GaAs, InAs, GaSb and InSb, 5 to 25 microns thick, were found to bend spontaneously, the A surface being convex. Such bending is consistent with the elastic strain energy associated with the distortion of the bonding configuration on the A surfaces of the III-V compounds. Exposure of the thin wafers to NH3 resulted in an increase in the radius of curvature whereas exposure to H2S resulted in a decrease in the radius of curvature. These effects are believed to result from preferential adsorption. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1964
Accession Number
AD0612566

Entities

People

  • H. C. Gatos
  • M. C. Finn

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Adsorption
  • Curvature
  • Distortion
  • Eccentricity
  • Geometric Forms
  • Geometry
  • Lines (Geometry)
  • Netherlands
  • Shape

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology
  • Surface Coatings Technology.