THIN FILMS FOR COMPOSITE MOLECULAR ELECTRONICS.
Abstract
Monocrystalline films of zinc sulfide and cadmium sulfide 2 x i cm in size were prepared by reaction of monocrystalline (002) zinc or (101) cadmium surfaces with hydrogen sulfide. The formation of zinc sulfide films at 235C and of cadmium sulfide films at 135C was monitored in a specially built high-temperature x-ray diffractometer attachment. Reaction temperatures around 300C produced polycrystalline films. The film thickness varied from 10 to 1000 A and the rate of growth from 3 to 250 A per hour. Selected films were investigated by polarized-light and electron microscopy and by x-ray and electron diffraction. The hexagonal wurtzite structure was found, although one cadmium sulfide film had a different hexagonal structure. For electrical measurements of cadmium sulfide films, the films were isolated by coating with lacquer and dissolving the substrate in mercury. The resistivity was between 0.001 and 40 ohm-cm. Some areas showed good N-type asymmetrical diode characteristics. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1963
- Accession Number
- AD0612679
Entities
People
- F. V. Schossberger
Organizations
- IIT Research Institute