RESEARCH AND DEVELOPMENT FOR SEMICONDUCTOR SURFACE CONTROL AND STABILIZATION.
Abstract
The report covers work performed during the reporting period in the following areas: metal oxide semiconductor (insulated gate) field effect transistor instability and degradation, the behavior of thermally grown silicon oxide passivating layers, the discovery of interface dislocations in passivated silicon structures, the effect of boron and phosphorus glasses on the distribution of gold in silicon, the effect of wafer processing on gold distribution near silicon-silicon dioxide interfaces, the comparison of glasses on passivated transistors manufactured by different companies and germanium planar transistor investigation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 1964
- Accession Number
- AD0612705
Entities
People
- B. Van Pul
- J. Adamic
- K. D. Kang
Organizations
- Motorola Mobility