HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).
Abstract
Results obtained from studies of the failure mode of the two-terminal device as well as processing techniques including die-cutting, surface cleanup and preservation and assembly methods are discussed. Test equipment design and test results for the engineering samples submitted during the quarter are included. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 28, 1964
- Accession Number
- AD0613275
Entities
People
- B. G. Burlingame
- W. F. Munzer
Organizations
- Motorola Mobility