CHEMICAL FORMATION OF MICROCIRCUIT ELEMENTS.
Abstract
The reactive sputtering technique was applied to form films of titanium and titanium oxide with a wide range of resistivities. Low resistance metallic films and insulating oxide films are found to be suitable for resistor and capacitor microcircuit elements respectively. Dielectric constants of over 100, and reasonably low dissipation factors have been achieved. Data furnished include frequency dependence of capacitor cza,txteristics, voltage breakdown, long term stability of resistor and capacitor elements, temperature coefficients and some basic film properties. The feasibility of using titanium-titanium oxide film contact for rectification is demonstrated. High static rectification ratios are obtained. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1965
- Accession Number
- AD0613563
Entities
People
- J. M. Mitchell
- T. K. Lakshmanan