STUDY OF SURFACE PROPERTIES OF ATOMICALLYCLEAN METALS AND SEMICONDUCTORS.
Abstract
Oxygen adsorption on the (0001) matte surface of Cds was enhanced when an intense light was incident on the crystal. A 3 to 5 Torr-min oxygen exposure in intense light extinguished the diffraction pattern, whereas a 750 Torr-min exposure in the dark had little effect on the pattern, although it caused a slight decrease in the conductivity of the surface. High temperature heating in vacuum (850C) produced (1103) thermal etch planes on the (0001) matte surface. It was found that the presence of oxygen before or during the light exposure increased the effect of the light. It was also found that ion bombardment increased the dark conductivity and greatly decreased the effect of an intense light. From these observations it is noted that (1) the observed changes in conductivity took place in a region close to or at the surface as suggested by the effect of ion bombardment, and (2) exposure of the crystal to oxygen and/or an intense light decreased the conductivity near the surface, possibly indicating photoabsorption of oxygen. Unlike the (0001) matte surface the (0001) specular surface was not affected by exposure to an intense light. Oxygen exposures of 750 degrees Torr-min in the dark and 3300 Torr-min in an intense light produced very little change in both the diffraction pattern and the subsequent dark conductivity of the (0001) specular surface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0613699
Entities
People
- B. D. Campbell
- H. E. Farnsworth