INVESTIGATION OF IMPURITY CONDUCTION IN TRANSMUTATION-DOPED GERMANIUM,

Abstract

Gallium and arsenic impurities were introduced into pure and previously doped germanium by slow neutron irradiation and subsequent nuclear transmutation. Three problems were studied. (1) The dependence of impurity conduction on the average impurity separation for fixed compensation K. (2) The transition to metallic impurity conduction. (3) The K dependence of the activation energy of impurity conduction. The results are compared with Miller's theory and the orbit radius of the acceptor is deduced. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1960
Accession Number
AD0613738

Entities

People

  • H. Fritzsche
  • M. Cuevas

Organizations

  • University of Chicago

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Compounds
  • Compensation
  • Compound Semiconductors
  • Electronics
  • Energy
  • Germanium
  • Heat Of Activation
  • Impurities
  • Neutron Bombardment
  • Neutrons
  • Nuclear Transmutation
  • Physics
  • Semiconductor Physics
  • Semiconductors
  • Solid State Electronics
  • Thermal Neutrons

Fields of Study

  • Materials science
  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Space