INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME VI. UNIPOLAR TRANSISTORS.

Abstract

This report discusses the theory and design parameters for unipolar (field effect) transistors in integrated circuits. The work is divided into four major sections. The first two major sections discuss the theory and characteristics of junction and surface (MOS) unipolar transistors. A detailed discussion is given of both the dc and small signal ac characteristics. The next section discusses design considerations for unipolar transistors in integrated circuits. This includes discussions of isolation problems, topological design, and compatibility of integrated unipolar transistors with other circuit components. Design examples are given of unipolar transistors for integrated circuits. The last major section discusses some possible circuit applications of unipolar transistors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1965
Accession Number
AD0613951

Entities

People

  • J. R. Hauser

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Electronic Equipment
  • Electronics
  • Integrated Circuits
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors

Readers

  • Semiconductor Device Technology
  • Software Engineering