ELECTROCHEMICAL DEMBER EFFECT IN SEMICONDUCTORS,
Abstract
It was demonstrated that during steady-state etching of a semiconductor with zero net current across the interface, there is a potential difference, superposed upon that of the space charge, between surface and interior whenever the reaction results in a net consumption or generation of carriers. It was possible to make rough measurements of this potential difference, which like the optically induced Dember effect is associated with gradients of excess carrier densities. Measured signals were of the correct order of magnitude and, for reactions known to be injecting, of the proper sign. In addition to etching reactions involving a net generation of carriers, examples were found of reactions which extracted carriers from the semiconductor as well as reactions in which the carriers apparently do not participate. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1964
- Accession Number
- AD0614180
Entities
People
- Mary C. Finn
- W. W. Harvey
Organizations
- Massachusetts Institute of Technology