EVALUATION OF FIELD-EFFECT TRANSISTORS.

Abstract

The report, a joint effort between reliability and nuclear effects describes the electrical parameters of field-effect transistors (FET) due to the effects of nuclear radiation. The report describes the method of measuring FET electrical parameters, a description of the radiation fields to which the FET's were subjected, and the analysis of the results of subjecting the FET's to a nuclear radiation environment.

Document Details

Document Type
Technical Report
Publication Date
Oct 04, 1962
Accession Number
AD0614268

Entities

People

  • Harold Y. Wong
  • William E. Price

Organizations

  • Lockheed Martin Missiles and Space

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Environment
  • Field Effect Transistors
  • Nuclear Radiation
  • Radiation
  • Reliability
  • Teamwork
  • Test And Evaluation
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Software Engineering
  • Spectroscopy.