EFFECT OF UNIAXIAL STRESS ON THE EXCITATION SPECTRA OF DONORS IN SILICON,
Abstract
When a uniaxial stress is applied to a multivalley semiconductor like silicon, the various conduction band minima shift in energy with respect to one another. Further, the site symmetry of a substitutional Group V donor in silicon, which is T in the unstrained crystal, is lowered by the stress. The purpose of the present paper is to report experimental observations on the splittings and the polarization effects exhibited by the excitation lines of neutral Group V donors in silicon subjected to uniaxial stress, and interpret them on the basis of the above effects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1964
- Accession Number
- AD0614529
Entities
People
- A. K. Ramdas
- R. L. Aggarwal
Organizations
- Purdue University