CHANGE IN ELECTROCONDUCTION OF VITREOUS SEMICONDUCTORS (T1ASSE2; T1ASSE4; AS4SE3TE3 AND AS2SE2TE) IN DEPENDENCE UPON THE MAGNITUDE OF INTEGRAL DOSAGE OF GAMMA-RADIATION,

Abstract

The dependence of electrical conductance on the integral dosage of gamma radiation is reported for the following vitreous semiconductors: TlSe.As2Se3, As2Se3.As2Te3, and 2As2Se3.As2Se3.

Document Details

Document Type
Technical Report
Publication Date
Apr 13, 1965
Accession Number
AD0614956

Entities

People

  • A. N. Bobrova

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Gamma Rays
  • Integrals
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics