STUDY OF SURFACE STATES IN SEMICONDUCTORS.
Abstract
Surface states on silicon oxidized by both thermal and anodic growth have been studied by two complementary experimental techniques - the pulsed field effect, and capacity measurements over a wide range of frequency and temperature. The two have revealed similar surface levels, and have led to the following conclusions: anodic oxidation creates an inversion layer on N-type silicon, which can be removed by heat treatment; and thermal oxidation leads to increased dislocation density, and results in reduction of the surface state density. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1965
- Accession Number
- AD0614986
Entities
People
- G. Rupprecht
- P. H. Smakula