DOPING STUDIES OF BI2(TE,SE)3 ALLOYS,

Abstract

Alloys of Bi2Te(3-x)Sex (0< or = X< or = 1) doped with controlled amounts of Cu, CuBr and BiI3 have been prepared according to the Bridgeman technique. The number, epsilon, of charge carriers per doping molecule as obtained from thermoelectric and galvanomagnetic measurements is found to vary with the selenium substitution. The results are explained in terms of the chemical bonding in the Bi2Te3 lattice. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1964
Accession Number
AD0615066

Entities

People

  • K. Tripathi
  • O. Beckman
  • P. Bergvall

Organizations

  • Uppsala University

Tags

DTIC Thesaurus Topics

  • Charge Carriers
  • Charged Particles
  • Elements
  • Measurement
  • Molecules
  • Selenium

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
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