DOPING STUDIES OF BI2(TE,SE)3 ALLOYS,
Abstract
Alloys of Bi2Te(3-x)Sex (0< or = X< or = 1) doped with controlled amounts of Cu, CuBr and BiI3 have been prepared according to the Bridgeman technique. The number, epsilon, of charge carriers per doping molecule as obtained from thermoelectric and galvanomagnetic measurements is found to vary with the selenium substitution. The results are explained in terms of the chemical bonding in the Bi2Te3 lattice. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1964
- Accession Number
- AD0615066
Entities
People
- K. Tripathi
- O. Beckman
- P. Bergvall
Organizations
- Uppsala University