SEMICONDUCTOR REFLECTION-TYPE MICROWAVE MODULATOR,
Abstract
A new type of microwave modulator is proposed. The electromagnetic radiation is reflected from a semiconductor block inserted in a wave guide. The block is placed just before a short. At low values of conductivity the semiconductor acts as a resonant cavity and the reflection coefficient will vary as conductivity and length for a given frequency. At multiples of odd quarter wavelengths the reflection is minimized and at one of these points the reflection coefficient is nearly zero due to almost complete absorption in the block. By using a semiconductor of critical length for a given frequency and varying its conductivity, relatively large effects can be observed in amplitude and phase modulation. Detailed calculations were carried out for germanium and silicon with radiation at to to the 10th power cycles per second, and preliminary experiments verified the manner in which amplitude changes with conductivity. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1965
- Accession Number
- AD0615113
Entities
People
- Dale A. Holmes
- Harold Jacobs
- Richard W. Benjamin
Organizations
- United States Army Communications-Electronics Command