INJECTION LASER STUDY.
Abstract
A summary of the switching characteristics of P-P(o)-N negative resistance diodes is presented, and theory is compared with experiment. Yellow electroluminescence was found at 77K by injecting electrons from an indium contact into an insulating region on the surface of phosphorus-doped ZnTe. The emission was observed in a 30-micron-thick layer adjacent to the contact, and had a quantum efficiency of 0.0001. No visible emission was obtained at room temperature. Times delays between the start of a current pulse and the onset of lasting in typical zinc-diffused GaAs lasers are of the order of nanoseconds at 77K, and are accounted for by the time required to build up the population inversion in the active layer. At higher temperatures the delays are longer, and may be explained by trapping. Typical room temperature results are shown. A simple model of the absorption or amplification of high-intensity monochromatic light in a semiconductor absorber or amplifier is presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1965
- Accession Number
- AD0615147
Entities
People
- F. F. Morehead
- Frederick Stern
- K. Konnerth
- K. Weiser
- P. R. Wagner
Organizations
- IBM Thomas J. Watson Research Center