RADIATIVE RECOMBINATION STUDIES IN PBTE AND PBSE,
Abstract
A study was made of the photo-induced recombination radiation from single crystals of PbTe and PbSe as a function of carrier concentration and temperature. The spectra was analyzed assuming the applicability of the principle of detailed balance, using the known band parameters of these direct gap semiconductors. Previous investigations of the lead salt semiconductors (PbTe, PbSe, and PbS) have shown that the band extrema occur at the L point and that the constant energy surfaces are prolate ellipsoids with comparable mass components in both bands. The spectrum analysis shows that the observed emission is the result of a band-to-band process. The spontaneous emission spectrum consists of a single spontaneous band with considerable structure superimposed. The structure is believed to be the result of longitudinal optical (LO) phonon interactions and yields the value 0.012= 0.002 ev and 0.018 = 0.002 ev for the LO phonon energy in PbTe and PbSe respectively. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1964
- Accession Number
- AD0615209
Entities
People
- E. R. Washwell
- K. F. Cuff
Organizations
- Lockheed Martin Missiles and Space