BEHAVIOR OF DIFFUSION-BASE GERMANIUM TRANSISTORS IN A GAMMA-RAY FIELD,

Abstract

The effect is explained of gamma radiation on the parameters of high-frequency diffusion germanium transistors of the type P-403. The coefficient of amplification of the current, the output conductance, and the feedback current of the collector were measured on the instrument IPPT-1 in a circuit with a common base in one system of operation on direct current.

Document Details

Document Type
Technical Report
Publication Date
Apr 16, 1965
Accession Number
AD0615224

Entities

People

  • A. V. Yurovskii
  • M. P. Sinyukov

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Amplification
  • Coefficients
  • Diffusion
  • Direct Current
  • Doppler Effect
  • Electromagnetic Radiation
  • Feedback
  • Frequency
  • Frequency Shift
  • Gamma Rays
  • Germanium
  • Ionizing Radiation
  • Nuclear Radiation
  • Radiation
  • Transistors

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Solar Physics