Tunneling Junction Diode Pressure Gauge,
Abstract
Tunneling junction diodes, designed specifically for use as miniature pressure gauges, were fabricated from arsenic-doped germanium of resistivity 0.001 ohm-cm and tested under hydrostatic pressures up to 10,000 psi. These 'flat ' diodes differ from ordinary tunnel diodes in that the peak-to-valley ratio has been reduced to 1 or less by increasing the excess and diffusion currents with high temperature alloying and increased alloying times. A negative resistance region appears only at low temperatures. This type of flat-characteristic, twoterminal device is useful as a constant-current device when the peak-to-valley ratio is 1 and as a variable range pressure gauge when the peak-to-valley ratio, is 1 or less by utilizing the pressure dependence of the tunneling current. These diodes have the advantage that they need not satisfy the strict stability requirements of the amplifier mode as does the usual tunnel diode when it is used in this manner; furthermore, bulky low inductance mounting is no longer needed. It is now possible to take full advantage of the extremely small size of these diodes, the working area of which may be as small as 0.003 in. in diameter. Gauge factors of 350 were achieved and the change in 'peak' current with pressure was shown to be comparable with that of Esaki diodes. Preliminary results are shown for a digital readout pressure transducer working from a tunnel diode oscillator. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1965
- Accession Number
- AD0615300
Entities
People
- Leon Horn
- Marvin M. Cohen
Organizations
- Harry Diamond Laboratories