FAILURE MECHANISMS IN SILICON SEMICONDUCTORS.
Abstract
Investigations were made of thermal instability in silicon power transistors, and the related phenomena of hot spots and second breakdown. The theory of the thermal instability problem is presented. A rather extensive investigation of the damage which occurs in silicon power transistors as a result of hot spots and second breakdown is included, and finally, special transistor structures are studied which serve to confirm earlier theories on thermal instability and shed new light on possible methods by which the failure mode of second breakdown can be minimized. An investigation was made of the surface properties of oxide covered silicon and silicon p-n junctions. In particular, the problem of charge motion on the outer surface of the oxide covering silicon and silicon p-n junction was studied, with relevance to the current-voltage characteristics of reverse biased silicon p-n junctions. These investigations were directed at a better understanding of the physics of failures which occur in oxide covered p-n junction devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1965
- Accession Number
- AD0615312
Entities
People
- W. Schroen
- W. W. Hooper