NONLINEAR SEMICONDUCTORS AT MILLIMETER FREQUENCIES.

Abstract

Measurements of the noise figure of an experimental 70-Gc/s receiver incorporating InSb hot-carrier mixers at 77 K were undertaken. The initial results indicate that the noise figure of this receiver is approximately 6 dB higher than that of the same receiver using a Schottky barrier mixer at room temperature. A 70-Gc/s hotcarrier detector was designed and constructed which exhibited square-law behavior for rf power levels up to 5 mW. A reliable experimental technique for measuring the characteristics of the hot-carrier modulator at uhf was established. Measurements on a typical unit yielded modulation indices of 80 percent at 220 Mc/s and 40 percent at 400 Mc/s. The insertion loss of the modulator was 4.5 dB. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1965
Accession Number
AD0615341

Entities

People

  • C. R. Smith
  • D. Fleri
  • E. Conwell
  • F. Drago
  • R. I. Harrison

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Detectors
  • Electronics
  • Frequency
  • Insertion Loss
  • Losses
  • Measurement
  • Modulation
  • Modulators
  • Power
  • Power Levels
  • Radio Frequency Power
  • Semiconductors
  • Solid State Electronics

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics