MICROWAVE DIODE RESEARCH.
Abstract
The report describes a low-impedance GaAs tunnel diode wafer that is designed for operation as either an amplifier or oscillator at 10 Gc with enhanced dynamic range. Parasitic resistance and inductance are held to low values by eliminating the etching process, by embedding the wafer in a matrix, and by coating the semiconductor with metal. GaAs diode wafers with peak currents of 10 to 100 ma, speed indices of 10 to 16 ma/pf, and resistive cutoff frequencies of 23 to 30 Gc have been made for testing the performance of low-impedance 10-Gc circuit structures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 1965
- Accession Number
- AD0615382
Entities
People
- P. J. Fillingham