JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,
Abstract
Progress which has been achieved in the synthesis of laser-quality Ga(As1-xPx) is reviewed. The method of synthesis and the structural, defect, and dislocation properties of the material are discussed. The general procedure for evaluation Ga(As1-xPx) in laser diodes is reviewed. Laser juctions in Ga(As1-xPx) with x=0.33 and threshold currents near 3000 A/sq cm at 77K are described. Apparatus for and experiments involving electron beam bombardment of III-V and II-VI semiconductor samples are described. The possibility of using this method to study recombination radiation in semiconductors in which currently junctions cannot be fabricated is discussed. An electron beam bombardment experiment which shows unambiguously that recombination radiation in Ga(As1-xPx) junctions originates on the p-type side of the junction is described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1964
- Accession Number
- AD0615435
Entities
People
- C. J. Nuese
- C. M. Wolfe
- M. D. Sirkis
- N. Holonyak Jr.
Organizations
- University of Illinois Urbana–Champaign