RELIABILITY ANALYSIS OF X-BAND TUNNEL DIODES.
Abstract
This report discusses improvements in tunnel diode fabrication techniques which are under development in Sylvania's Microwave Department laboratories. The basic approaches under investigation are standard product improvement, annular tunnel diode development, and solid structure tunnel diode development. Some of the innovations from this investigation are an improved package, an improved reproducible alloy process which does not use spheres as alloy material, and a solid structure device which requires no etching after assembly. Junctions produced by these techniques have been cycled 5 times from -196 C to + 100 C with no change in parameters, indicating a resistance to thermal shock damage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1965
- Accession Number
- AD0615498
Entities
Organizations
- Sylvania Electric Products