RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR DIODES FOR ELECTRONIC TUNING.

Abstract

The fabrication of 200-volt planar silicon diodes with an area of 0.1 to 0.4 sq cm was shown to be feasible, and techniques developed for obtaining that objective are described. It was concluded that additional improvements in yields and in electrical characteristics of devices could be realized by implementation of additional processing changes.

Document Details

Document Type
Technical Report
Publication Date
Dec 26, 1964
Accession Number
AD0615541

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Diodes
  • Electronics
  • Fabrication
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductor Devices
  • Semiconductor Diodes
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics